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| PD - 95572 IRFZ44ESPBF IRFZ44ELPbF l l l l l l l Advanced Process Technology Surface Mount (IRFZ44ES) Low-profile through-hole (IRFZ44EL) 175C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free HEXFET(R) Power MOSFET D VDSS = 60V RDS(on) = 0.023 G ID = 48A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application. The through-hole version (IRFZ44EL) is available for low-profile applications. D 2 Pak TO-262 Absolute Maximum Ratings Parameter ID @ TC = 25C ID @ TC = 100C IDM PD @TC = 25C VGS EAS IAR EAR dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 srew Max. 48 34 192 110 0.71 20 220 29 11 5.0 -55 to + 175 300 (1.6mm from case ) 10 lbf*in (1.1N*m) Units A W W/C V mJ A mJ V/ns C Thermal Resistance Parameter RJC RCS RJA Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient Typ. --- 0.50 --- Max. 1.4 --- 62 Units C/W www.irf.com 1 07/19/04 IRFZ44ES/LPbF Electrical Characteristics @ TJ = 25C (unless otherwise specified) Parameter Min. Drain-to-Source Breakdown Voltage 60 DV(BR)DSS/DTJ Breakdown Voltage Temp. Coefficient --- RDS(on) Static Drain-to-Source On-Resistance --- VGS(th) Gate Threshold Voltage 2.0 gfs Forward Transconductance 15 --- IDSS Drain-to-Source Leakage Current --- Gate-to-Source Forward Leakage --- IGSS Gate-to-Source Reverse Leakage --- Qg Total Gate Charge --- Qgs Gate-to-Source Charge --- Qgd Gate-to-Drain ("Miller") Charge --- td(on) Turn-On Delay Time --- tr Rise Time --- td(off) Turn-Off Delay Time --- tf Fall Time --- V(BR)DSS LS Ciss Coss Crss Internal Source Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance --- --- --- --- Typ. --- 0.063 --- --- --- --- --- --- --- --- --- --- 12 60 70 70 7.5 1360 420 160 Max. Units Conditions --- V VGS = 0V, ID = 250A --- V/C Reference to 25C, ID = 1mA 0.023 VGS = 10V, ID = 29A 4.0 V VDS = VGS, ID = 250A --- S VDS = 30V, ID = 29A 25 VDS = 60V, VGS = 0V A 250 VDS = 48V, VGS = 0V, TJ = 150C 100 VGS = 20V nA -100 VGS = -20V 60 ID = 29A 13 nC VDS = 48V 23 VGS = 10V, See Fig. 6 and 13 --- VDD = 30V --- ID = 29A ns --- RG = 15 --- RD = 1.1, See Fig. 10 Between lead, --- nH and center of die contact --- VGS = 0V --- pF VDS = 25V --- = 1.0MHz, See Fig. 5 Source-Drain Ratings and Characteristics IS I SM VSD trr Q rr ton Notes: Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time Min. Typ. Max. Units Conditions D MOSFET symbol 48 --- --- showing the A G integral reverse --- --- 192 S p-n junction diode. --- --- 1.3 V TJ = 25C, IS = 29A, VGS = 0V --- 69 104 ns TJ = 25C, IF = 29A --- 177 266 nC di/dt = 100A/s Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11 ) Pulse width 300s; duty cycle 2%. Uses IRFZ44E data and test conditions Starting TJ = 25C, L = 520H RG = 25, IAS = 29A. (See Figure 12) ISD 29A, di/dt 320A/s, VDD V(BR)DSS, TJ 175C ** When mounted on 1" square PCB ( FR-4 or G-10 Material ). For recommended soldering techniques refer to application note #AN-994. 2 www.irf.com IRFZ44ES/LPbF 1000 I D , Drain-to-Source Current (A) 100 I D , Drain-to-Source Current (A) VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V TOP 1000 VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V TOP 100 10 4.5V 10 4.5V 1 0.1 20s PULSE WIDTH TJ = 25 C 1 10 100 1 0.1 20s PULSE WIDTH TJ = 175 C 1 10 100 VDS , Drain-to-Source Voltage (V) VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 1000 2.5 RDS(on) , Drain-to-Source On Resistance (Normalized) ID = 48A I D , Drain-to-Source Current (A) 2.0 TJ = 25 C 100 TJ = 175 C 1.5 1.0 10 0.5 1 4 5 6 7 V DS = 25V 20s PULSE WIDTH 8 9 10 0.0 -60 -40 -20 0 VGS = 10V 20 40 60 80 100 120 140 160 180 VGS , Gate-to-Source Voltage (V) TJ , Junction Temperature ( C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature www.irf.com 3 IRFZ44ES/LPbF 2500 VGS , Gate-to-Source Voltage (V) 2000 VGS = 0V, f = 1MHz Ciss = Cgs + Cgd , Cds SHORTED Crss = Cgd Coss = Cds + Cgd 20 ID = 29 VDS = 48V VDS = 30V 16 C, Capacitance (pF) Ciss 1500 12 Coss 1000 8 500 Crss 4 0 1 10 100 0 0 10 20 30 FOR TEST CIRCUIT SEE FIGURE 13 40 50 60 VDS , Drain-to-Source Voltage (V) QG , Total Gate Charge (nC) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 1000 Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 1000 ISD , Reverse Drain Current (A) OPERATION IN THIS AREA LIMITED BY RDS(on) ID , Drain Current (A) 100 T = 175 C J 100 10us 100us 10 10 TJ = 25 C 1ms 10ms 1 0.5 V GS = 0 V 1.0 1.5 2.0 2.5 1 TC = 25 C TJ = 175 C Single Pulse 1 10 100 1000 VSD ,Source-to-Drain Voltage (V) VDS , Drain-to-Source Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage 4 Fig 8. Maximum Safe Operating Area www.irf.com IRFZ44ES/LPbF 50 50 V DS V GS RD 40 RG 10V Pulse Width 1 s Duty Factor 0.1 % D.U.T. + V DD ID , Drain Current (A) ID , Drain Current (A) 40 - 30 30 20 20 Fig 10a. Switching Time Test Circuit VDS 90% 10 10 0 0 25 25 50 50 75 100 125 150 125 150 TC ,75 Case 100 Temperature ( C) TC , Case Temperature ( C) 175 175 10% VGS td(on) tr t d(off) tf Fig 9. Maximum Drain Current Vs. Case Temperature 10 Fig 10b. Switching Time Waveforms Thermal Response (Z thJC ) 1 D = 0.50 0.20 0.10 PDM t1 SINGLE PULSE (THERMAL RESPONSE) Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJC + TC 0.0001 0.001 0.01 0.1 1 t2 0.1 0.05 0.02 0.01 0.01 0.00001 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com 5 IRFZ44ES/LPbF 15V EAS , Single Pulse Avalanche Energy (mJ) 500 TOP 400 BOTTOM ID 12A 21A 29A VDS L DRIVER RG 20V D.U.T IAS tp 300 + - VDD A 0.01 200 Fig 12a. Unclamped Inductive Test Circuit V(BR)DSS tp 100 0 25 50 75 100 125 150 175 Starting TJ , Junction Temperature ( C) Fig 12c. Maximum Avalanche Energy Vs. Drain Current I AS Fig 12b. Unclamped Inductive Waveforms Current Regulator Same Type as D.U.T. 50K QG 12V .2F .3F 10 V QGS VG QGD VGS 3mA D.U.T. + V - DS IG ID Charge Current Sampling Resistors Fig 13a. Basic Gate Charge Waveform Fig 13b. Gate Charge Test Circuit 6 www.irf.com IRFZ44ES/LPbF Peak Diode Recovery dv/dt Test Circuit D.U.T + + Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer - + RG * * * * dv/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test + VDD Driver Gate Drive P.W. Period D= P.W. Period VGS=10V * D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt VDD Re-Applied Voltage Inductor Curent Body Diode Forward Drop Ripple 5% ISD * VGS = 5V for Logic Level Devices Fig 14. For N-Channel HEXFETS www.irf.com 7 IRFZ44ES/LPbF D2Pak Package Outline Dimensions are shown in millimeters (inches) D2Pak Part Marking Information T HIS IS AN IRF530S WIT H L OT CODE 8024 AS S EMB LED ON WW 02, 2000 IN T HE AS S EMB LY LINE "L" Note: "P" in assembly line position indicates "Lead-Free" INT ERNAT IONAL RECT IFIER LOGO PART NUMBER F530S DAT E CODE YEAR 0 = 2000 WEEK 02 LINE L ASS EMBLY LOT CODE OR INT ERNAT IONAL RE CT IFIER LOGO AS S EMBLY LOT CODE PART NUMBE R F 530S DAT E CODE P = DES IGNAT ES LE AD-F REE PRODUCT (OPT IONAL) YEAR 0 = 2000 WEE K 02 A = AS S E MB LY S IT E CODE 8 www.irf.com IRFZ44ES/LPbF TO-262 Package Outline Dimensions are shown in millimeters (inches) TO-262 Part Marking Information EXAMPLE: T HIS IS AN IRL3103L L OT CODE 1789 AS S EMB LED ON WW 19, 1997 IN T HE AS S EMBLY LINE "C" Note: "P" in assembly line position indicates "Lead-Free" INT ERNAT IONAL RECT IF IER L OGO PART NUMBER AS S EMBLY L OT CODE DAT E CODE YE AR 7 = 1997 WEE K 19 LINE C OR INT ERNAT IONAL RECT IF IER LOGO PART NUMBER DAT E CODE P = DES IGNAT ES LEAD-F REE PRODUCT (OPT IONAL) YEAR 7 = 1997 WEEK 19 A = AS S EMBL Y S IT E CODE AS S EMBLY LOT CODE www.irf.com 9 IRFZ44ES/LPbF D2Pak Tape & Reel Information Dimensions are shown in millimeters (inches) TRR 1.60 (.063) 1.50 (.059) 4.10 (.161) 3.90 (.153) 1.60 (.063) 1.50 (.059) 0.368 (.0145) 0.342 (.0135) FEED DIRECTION 1.85 (.073) 1.65 (.065) 11.60 (.457) 11.40 (.449) 15.42 (.609) 15.22 (.601) 24.30 (.957) 23.90 (.941) TRL 10.90 (.429) 10.70 (.421) 1.75 (.069) 1.25 (.049) 16.10 (.634) 15.90 (.626) 4.72 (.136) 4.52 (.178) FEED DIRECTION 13.50 (.532) 12.80 (.504) 27.40 (1.079) 23.90 (.941) 4 330.00 (14.173) MAX. 60.00 (2.362) MIN. NOTES : 1. COMFORMS TO EIA-418. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION MEASURED @ HUB. 4. INCLUDES FLANGE DISTORTION @ OUTER EDGE. 30.40 (1.197) MAX. 26.40 (1.039) 24.40 (.961) 3 4 Data and specifications subject to change without notice. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. 07/04 10 www.irf.com |
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